| 摘要 |
There is provided a magneto-resistive sensor including (a) a multi-layered structure including a base layer, a magnetic layer, and a non-magnetic layer, the magnetic and non-magnetic layers being deposited on or above the base layer, the multi-layered structure having a sense region therein, and (b) a pair of electrode layers electrically connected to the sense region at its opposite sides, the electrode layers leading a sense current into the sense region at one side thereof and leading the sense current out of the sense region through the other side thereof, the magneto-resistive sensor detecting a magnetic field in accordance with fluctuation in a resistance in the sense region, the base layer being composed of zirconium (Zr) or alloy thereof. The magneto-resistive sensor makes it possible to provide a magneto-resistive layer having crystallinity superior to almost the same degree as crystallinity obtained when a base layer is composed of Ta, and to ensure a high resistance-change ratio.
|
