发明名称 |
Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon |
摘要 |
A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.
|
申请公布号 |
US6663989(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20020109319 |
申请日期 |
2002.03.28 |
申请人 |
MAX-PLANCK-INSTITUT FUR MIKROSTRUKTURPHYSIK |
发明人 |
LEE HO NYUNG;SENZ STEPHAN;VISINOIU ALINA;PIGNOLET ALAIN;HESSE DIETRICH;GOESELE ULRICH |
分类号 |
B32B9/00;B32B9/04;B32B13/04;B32B15/04;B32B19/00;C30B23/02;C30B25/18;C30B29/32;H01L21/314;H01L21/316;(IPC1-7):B32B9/00 |
主分类号 |
B32B9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|