发明名称 |
OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration |
摘要 |
A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.
|
申请公布号 |
US6664010(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20010942931 |
申请日期 |
2001.08.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
AHRENS MARCO;MAURER WILHELM;KNOBLOCH JUERGEN;ZIMMERMANN RAINER |
分类号 |
G03F1/00;(IPC1-7):G03F9/00;G06F17/50 |
主分类号 |
G03F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|