| 摘要 |
PURPOSE: A sense amplifier for restricting a pull-down voltage of a bit signal and a semiconductor memory device having the same are provided to prevent the unnecessary power consumption and the stress by restricting a falling voltage of a pull-down terminal. CONSTITUTION: A semiconductor memory device includes a bit line sense amplifier(803) for amplifying a bit signal and a complementary bit signal and a memory cell for storing the bit signal. The memory cell includes a transmission transistor and a capacitor. The transmission transistor is used for transmitting the bit signal according a predetermined word signal. The capacitor is used for storing the bit signal. The bit line sense amplifier includes an amplification portion(901), a pull-up portion(903), and a pull-down portion(905). The amplification portion amplifies the bit signal and a complementary bit signal. The pull-up portion includes the first PMOS transistor to boost a voltage of a pull-up terminal. The pull-down portion falls a voltage of a pull-down terminal.
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