METHOD FOR IMPROVING THIN FILM CHARACTERISTIC OF POROUS DIELECTRIC LAYER

摘要

PURPOSE: A method for improving the thin film characteristic of a porous dielectric layer is provided to be capable of reducing dielectric constant and decreasing leakage current. CONSTITUTION: A dielectric layer is formed at the upper portion of a substrate by carrying out a precursor solution coating process. A baking process is carried out at the coated dielectric layer. Then, the baked dielectric layer is hardened. A plurality of porosities are formed at the baked dielectric layer by using a heat treatment or UV(UltraViolet) rays for completing a porous dielectric layer. Preferably, the porous dielectric layer is capable of being formed by using a CVD(Chemical Vapor Deposition) process. Preferably, the precursor solution contains aerogel or xerogel.