METHOD OF FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming capacitor of a semiconductor device is provided to increase electric permittivity of the capacitor. CONSTITUTION: A lower electrode(150a) of capacitor is formed on a semiconductor substrate. The lower electrode(150a) includes a conductive carbon. A dielectric layer(160) containing an oxide material is formed on the lower electrode(150a) by the reaction with the surface of the lower electrode in gas phase. The formed dielectric layer(160) is Al2O3. After annealing the dielectric layer(160), an upper electrode(170) is formed on the dielectric layer.