发明名称 |
Method of forming storage nodes comprising a base in a contact hole and related structures |
摘要 |
Methods of forming an electronic structure can include forming an interlayer insulating layer on a substrate, and forming a storage node comprising a base and sidewalls extending away from the base. The interlayer insulating layer can have a contact hole therein exposing a portion of the substrate. Moreover, the storage node base can be in the contact hole and the sidewalls can extend away from the base and away from the substrate with portions of the sidewalls being within the contact hole and with portions of the sidewalls extending outside the contact hole beyond the interlayer insulating layer away from the substrate. Related structures are also discussed.
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申请公布号 |
US2003227045(A1) |
申请公布日期 |
2003.12.11 |
申请号 |
US20030445426 |
申请日期 |
2003.05.27 |
申请人 |
LEE WON-JUN;HWANG IN-SEAK;SHIN JI-CHUL |
发明人 |
LEE WON-JUN;HWANG IN-SEAK;SHIN JI-CHUL |
分类号 |
H01L27/108;H01L21/02;H01L21/8242;(IPC1-7):H01L21/824;H01L29/76;H01L31/119;H01L21/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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