METHOD FOR FORMING STORAGE NODE OF CAPACITOR

摘要

PURPOSE: A method for forming storage node of capacitor is provided to improve storage capacitance thereof by forming duplicate lower electrode. CONSTITUTION: On a semiconductor substrate, an isolation layer(225) is formed. Etching a desired portion of the isolation layer is performed to form the first aperture which partly opens the top surface of the substrate. The first polysilicon layer(250a) is formed successively on the side wall of the first aperture and the bottom portion thereof. After filling the first aperture with an insulation material(255a), the second aperture is formed such that it surrounds the side wall of the first aperture. The second polysilicon layer is deposited successively onto the side wall of the first aperture and its bottom portion. The isolation layer and insulation material formed on the substrate and included by the first and second apertures is removed to form the storage node.