METHOD FOR FORMING PATTERN OF INTERMETAL DIELECTRIC LAYER

摘要

PURPOSE: A method for forming a pattern of an intermetal dielectric layer is provided to be capable of preventing the generation of photoresist residuals after carrying out a developing process by changing the chemical structure of the surface of a via hole using UV(UltraViolet) ray. CONSTITUTION: After sequentially forming a lower etching stop layer(2), a lower insulating layer(3), an upper etching stop layer(4), and an upper insulating layer(5) at the upper portion of a lower line(1) formed semiconductor substrate, a via hole is formed by selectively patterning the upper insulating layer, the upper etching stop layer, and the lower insulating layer for exposing the lower etching stop layer. Then, UV ray is irradiated to the via hole. After forming a photoresist layer(8) on the entire surface of the resultant structure, a photoresist pattern is formed by selectively patterning the photoresist layer.