METHOD FOR FORMING THIN FILM CONTAINING LITTLE HYDROGEN

摘要

PURPOSE: A method for forming a thin film is provided to be capable of reducing the hydrogen contained at the thin film by using an N2 remote plasma process. CONSTITUTION: After loading a semiconductor substrate at the inner portion of a chamber, a thin film is formed at the upper portion of the semiconductor substrate(100). A nitride remote plasma process is carried out for reducing the hydrogen contained at the thin film(110). At this time, the nitride remote plasma process is used for purging residuals of the first reaction material. Preferably, a nitride layer is used as the thin film. Preferably, the thin film is formed by carrying out an ALD(Atomic Layer Deposition) process. Preferably, the thin film is capable of being formed by carrying out a CVD(Chemical Vapor Deposition) process.