发明名称 |
Method of rounding a corner of a contact |
摘要 |
The present invention provides a method for forming a contact opening having a rounded corner. Because the corner of the formed contact opening is rounded, a conductive material that is free of voids can be formed within the contact opening. In the present invention, a dielectric layer and a patterned photoresist layer are sequentially formed on a substrate. An isotropic etching process and a main etching process are performed to form a contact opening in the dielectric layer. A photoresist descum process is performed to remove a portion of the photoresist layer. Then, a soft etching process is performed to form a rounded corner on the top of the contact opening. The contact opening can be substantially filled with a conductive layer.
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申请公布号 |
US2003227092(A1) |
申请公布日期 |
2003.12.11 |
申请号 |
US20020163042 |
申请日期 |
2002.06.05 |
申请人 |
LIU DE-CHUAN;LU JUNG-KUEI;HWU SHENG-SHING |
发明人 |
LIU DE-CHUAN;LU JUNG-KUEI;HWU SHENG-SHING |
分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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