发明名称 Method of rounding a corner of a contact
摘要 The present invention provides a method for forming a contact opening having a rounded corner. Because the corner of the formed contact opening is rounded, a conductive material that is free of voids can be formed within the contact opening. In the present invention, a dielectric layer and a patterned photoresist layer are sequentially formed on a substrate. An isotropic etching process and a main etching process are performed to form a contact opening in the dielectric layer. A photoresist descum process is performed to remove a portion of the photoresist layer. Then, a soft etching process is performed to form a rounded corner on the top of the contact opening. The contact opening can be substantially filled with a conductive layer.
申请公布号 US2003227092(A1) 申请公布日期 2003.12.11
申请号 US20020163042 申请日期 2002.06.05
申请人 LIU DE-CHUAN;LU JUNG-KUEI;HWU SHENG-SHING 发明人 LIU DE-CHUAN;LU JUNG-KUEI;HWU SHENG-SHING
分类号 H01L21/768;H01L23/522;(IPC1-7):H01L23/48 主分类号 H01L21/768
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