发明名称 |
Semiconductor memories |
摘要 |
A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two-and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.
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申请公布号 |
US2003227041(A1) |
申请公布日期 |
2003.12.11 |
申请号 |
US20020167754 |
申请日期 |
2002.06.11 |
申请人 |
ATWOOD BRYAN;YANO KAZUO;ISHII TOMOYUKI;OSABE TARO;YANAGISAWA KAZUMASA;SAKATA TAKESHI |
发明人 |
ATWOOD BRYAN;YANO KAZUO;ISHII TOMOYUKI;OSABE TARO;YANAGISAWA KAZUMASA;SAKATA TAKESHI |
分类号 |
G11C11/00;G11C11/401;G11C11/405;G11C11/406;G11C11/4076;H01L21/8242;H01L27/105;H01L27/108;H01L27/12;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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