| 摘要 |
<p>A method for making a semiconductor device is described. That method comprises forming on a substrate (100) a dielectric layer (101) that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. An insulating layer (102), which is compatible with the dielectric layer and a gate electrode to be formed on the insulating layer, is formed on the dielectric layer, and a gate electrode (103) is then formed on the insulating layer.</p> |
