发明名称 GROUP III NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 <p>An uppermost layer of a portion of electrodes revealed from an electrically insulating layer with which a surface of a light-emitting element is covered is formed of at least one kind of metal or an alloy of the metal selected from the group consisting of Ni, Cu, Ag, Fe and Mo, which is easy to make an alloy with solder.</p>
申请公布号 KR20030094073(A) 申请公布日期 2003.12.11
申请号 KR20030035018 申请日期 2003.05.31
申请人 发明人
分类号 H01L33/00;H01L33/06;H01L33/32;H01L33/40;H01L33/62 主分类号 H01L33/00
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