发明名称 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A semiconductor memory device and a method for manufacturing the same are provided to prevent bridge of a storage node while collapsing the storage node by forming a cap on the storage node. CONSTITUTION: A plurality of storage nodes(26a) having cylindrical shape are formed on a semiconductor substrate(20). A cap(28a) is formed on the storage nodes by surrounding the storage nodes(26a). Adjacent caps(28a) are isolated each other or connected each other to one direction. Preferably, the cap(28a) is made of a nitride layer.
申请公布号 KR20030093817(A) 申请公布日期 2003.12.11
申请号 KR20020031678 申请日期 2002.06.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JE MIN
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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