发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor memory device and a method for manufacturing the same are provided to prevent bridge of a storage node while collapsing the storage node by forming a cap on the storage node. CONSTITUTION: A plurality of storage nodes(26a) having cylindrical shape are formed on a semiconductor substrate(20). A cap(28a) is formed on the storage nodes by surrounding the storage nodes(26a). Adjacent caps(28a) are isolated each other or connected each other to one direction. Preferably, the cap(28a) is made of a nitride layer.
|
申请公布号 |
KR20030093817(A) |
申请公布日期 |
2003.12.11 |
申请号 |
KR20020031678 |
申请日期 |
2002.06.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JE MIN |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|