发明名称 Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications
摘要 A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.
申请公布号 US2003227116(A1) 申请公布日期 2003.12.11
申请号 US20030425460 申请日期 2003.04.29
申请人 HALIK MARCUS;SCHMID GUNTER;STEFFEN KATJA;KLAUK HAGEN 发明人 HALIK MARCUS;SCHMID GUNTER;STEFFEN KATJA;KLAUK HAGEN
分类号 H01L29/12;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):F16F7/00 主分类号 H01L29/12
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