METHOD FOR FORMING CVD LAYER FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a CVD(Chemical Vapor Deposition) layer for manufacturing a semiconductor device is provided to be capable of forming a plurality of aiming CVD layers in one equipment at a time for reducing the loss of the equipment and preventing the increase of fabrication cost. CONSTITUTION: After forming an STI(Shallow Trench Isolation) layer at the upper portion of a silicon substrate by carrying out a BUC process, an STI UBUC layer is deposited on the entire surface of the resultant structure without the change of an equipment, so that a PE-TEOS(Plasma Enhanced-TetraEthylOrthoSilicate) depositing process is capable of being skipped. At this time, the BUC process is simultaneously carried out with a depositing process and an etching process. Preferably, the STI UBUC layer is made of the same or similar material of a PE-TEOS layer.