| 摘要 |
PURPOSE: A metal line structure of a semiconductor device and a manufacturing method thereof are provided to be capable of preventing the generation of a micro-structure at the inner portion of an Al layer, and restraining the generation of metal voids in a contact and the opening phenomenon at an upper line. CONSTITUTION: A metal line structure of a semiconductor device is provided with the first to fourth metal layer(105,107,109,111) sequentially formed at the upper portion of the first insulating layer(103), the second insulating layer(113) formed at the upper portion of the first insulating layer, and the third insulating layer(115) formed at the upper portion of the second insulating layer. The metal line structure further includes a contact(117) formed at the resultant structure, and the fifth to ninth metal layer(119,121,122,123,125) sequentially formed at the resultant structure. At this time, the second insulating layer is located at the lower portion of the fourth insulating layer. At the time, the third metal layer is made of an Al layer.
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