METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the attack phenomenon of the first insulating layer due to a wet etching process by using an attack barrier. CONSTITUTION: A plurality of plugs(15) are formed through the first insulating layer(12) for contacting a substrate(10). Each plug is protruded from the first insulating layer. After forming an attack preventing insulating layer at the resultant structure, an attack barrier(30') is formed at the corner portion of the plug. The second insulating layer(16) is formed on the entire surface of the resultant structure. A conductive pattern is formed through the second insulating layer for selectively contacting the plugs. A contact hole is formed by selectively etching the second insulating layer for exposing the surfaces of the other plugs.