Display device with active-matrix transistor and method for manufacturing the same

摘要

A laser beam 208 is selectively directed to an amorphous silicon film 104 of a pixel portion on an active-matrix substrate 101 of a display device to modify the amorphous silicon film 104 into a polysilicon film 105. Pixel circuits such as thin film transistors are formed on the modified polysilicon film 105. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.