| 摘要 |
A BOX layer and an SOI layer are formed on a P type silicon substrate and a P well and an N well are formed in the SOI layer. First P type diffusion regions positioned below S/D regions, a second P type diffusion region positioned below a channel region, a third P type diffusion region positioned between an STI region 4 and a BOX layer 2, and a fourth P type diffusion region as a body contact are formed within the P well, and the second and third P type diffusion regions are positioned at the same level, and further, the second and third P type diffusion regions are formed to have a dopant concentration higher than that of the first P type diffusion region.
|
