SUSCEPTOR WITH EPITAXIAL GROWTH CONTROL DEVICES AND EPITAXIAL REACTOR USING THE SAME

摘要

A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).