发明名称 Dual damascene semiconductor devices
摘要 A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle theta of radiation rays in the irradiating step with respect to a perpendicular direction of a surface of the substrate, fulfills the relationship tan theta>=H+H'/2(D+D') wherein D is a depth of the wiring slot, D' is a thickness of the photoresist film, H is a diameter of the via hole in a opening of the wiring slot, and H' is the width of the wiring slot.
申请公布号 US2003227090(A1) 申请公布日期 2003.12.11
申请号 US20020158011 申请日期 2002.05.31
申请人 OKABE ICHIRO 发明人 OKABE ICHIRO
分类号 H01L21/768;H01L23/532;(IPC1-7):H01L23/48 主分类号 H01L21/768
代理机构 代理人
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