发明名称 Temperature-adjusted pre-charged reference for an integrated circuit 1T/1C ferroelectric memory
摘要 A temperature-dependent reference works by pre-charging a standard linear CMOS or ferroelectric reference capacitor to a pre-charge voltage that is dependent on temperature. At cold temperatures the pre-charge voltage is higher, resulting in a larger voltage on the reference bit-line. At warm temperatures the pre-charge voltage is lower, resulting in a smaller voltage on the reference bit-line. Both the precise temperature slope and offset pre-charge voltage are selectable.
申请公布号 US2003227809(A1) 申请公布日期 2003.12.11
申请号 US20020163323 申请日期 2002.06.05
申请人 SCHWARTZ KURT S. 发明人 SCHWARTZ KURT S.
分类号 G11C11/22;(IPC1-7):G11C7/04 主分类号 G11C11/22
代理机构 代理人
主权项
地址