| 摘要 |
New photoresists are provided that are suitable for short wavelength imaging, including sub-300 nm and sub-200 nm such as 193 nm and 157 nm. Resists of the invention comprise a polymer component that contains one or more adhesion-promoting groups that can impart enhanced adhesion of a coating layer of a photoresist containing the polymer to an underlying substrate, including a SiON layer.
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