发明名称 Method for manufacturing semiconductor device
摘要 A method for manufacturing a semiconductor device includes forming an insulating film so as to cover a patterned film including a noble metal, and polishing the insulating film by a chemical-mechanical polishing process. Thus, it is possible to bury the film including a noble metal without the generation of scratches, deformation and peeling of the film including a noble metal and without a film that remains on the film including a noble metal.
申请公布号 US2003228734(A1) 申请公布日期 2003.12.11
申请号 US20030455142 申请日期 2003.06.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NATSUME SHINYA;MIKAWA TAKUMI;JUUDAI YUUJI
分类号 H01L21/02;(IPC1-7):H01L21/823;H01L21/824;H01L21/20;H01L21/44 主分类号 H01L21/02
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