发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device includes forming an insulating film so as to cover a patterned film including a noble metal, and polishing the insulating film by a chemical-mechanical polishing process. Thus, it is possible to bury the film including a noble metal without the generation of scratches, deformation and peeling of the film including a noble metal and without a film that remains on the film including a noble metal.
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申请公布号 |
US2003228734(A1) |
申请公布日期 |
2003.12.11 |
申请号 |
US20030455142 |
申请日期 |
2003.06.05 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NATSUME SHINYA;MIKAWA TAKUMI;JUUDAI YUUJI |
分类号 |
H01L21/02;(IPC1-7):H01L21/823;H01L21/824;H01L21/20;H01L21/44 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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