| 发明名称 |
Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication |
| 摘要 |
A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed.
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| 申请公布号 |
US2003227056(A1) |
申请公布日期 |
2003.12.11 |
| 申请号 |
US20020161615 |
申请日期 |
2002.06.05 |
| 申请人 |
WANG HONGMEI;ZAHURAK JOHN K. |
发明人 |
WANG HONGMEI;ZAHURAK JOHN K. |
| 分类号 |
H01L21/8242;H01L21/84;H01L27/108;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L21/8242 |
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