| 摘要 |
Thermoelectric generator or peltier arrangement comprises a thermoelectric semiconductor material made from a p-doped or n-doped semiconductor material of a ternary compound of formula (I), except ternary compounds of formula AlB12 and SiB6, or a mixed oxide of formula (II). MexSAySBz (I) Me = Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Cu or Ag; SA and SB = B, C, Si, Ge, Sb, Se or Te; and x, y and z = 0.01-1. ((CaO)u.(SrO)v.(BaO)w.(1/2Bi2O3)x)f.(2n+a/2).((k).MenOn/2.(2-k).Men+aOn+a/2) (II) Me = Fe, Cu, V, Mn, Sn, Ti, Mo or W; n = 1-6; a = 1 or 2; f = 0.2-5; k = 0.01-2; and u + v + w + x = 1. Independent claims are also included for: (1) a process for the production of the semiconductor materials comprising sintering or melting together, and sintering mixtures of the elemental powder or sintering mixtures of the oxide powder; and (2) a process for the combinatory production and testing of the semiconductor materials for thermoelectric generators.
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