| 发明名称 |
DENSE ARRAY STRUCTURE FOR NON-VOLATILE SEMICONDUCTOR MEMORIES |
| 摘要 |
The present invention describes an array structure (10) for non-volatile semiconductor memory elements (14, 16) with a high area density. This high density is obtained by the combination of a commonly used virtual ground scheme and a 2-dimensional array of memory elements (14, 16). Wordlines (18, 20) connecting memory elements (14, 16) in a row or a column cross each other at insulated cross-points (22). Furthermore, the invention describes a possible fabrication process for such memory arrays.
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| 申请公布号 |
WO03103051(A1) |
申请公布日期 |
2003.12.11 |
| 申请号 |
WO2003IB02143 |
申请日期 |
2003.05.19 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;VAN DUUREN, MICHIEL, J.;VAN SCHAIJK, ROBERTUS, T., F. |
发明人 |
VAN DUUREN, MICHIEL, J.;VAN SCHAIJK, ROBERTUS, T., F. |
| 分类号 |
G11C16/04;H01L21/8246;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115;H01L21/824 |
主分类号 |
G11C16/04 |
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