Non-volatile semiconductor memory device

摘要

A MONOS element includes: a first gate insulating film formed on a main surface so as to be located on an n-type well region; a first gate electrode provided on first gate insulating film; and a pair of p-type impurity regions and formed of p-type impurity regions. First insulating film includes: a first silicon oxide film; a silicon nitride film; and a second silicon oxide film formed on silicon nitride film. A field-effect transistor includes a second insulating film made of the same material as that of first insulating film.