发明名称 CVD-PVD deposition process
摘要 The present invention relates to a method for depositing metal layers on substrates with improved surface morphology. According to one aspect of the invention, a metal is deposited by chemical vapor deposition on a substrate having an aperture formed therein. A metal is then deposited on the substrate by physical vapor deposition performed with a low substrate temperature. The substrate is then heated. The substrate may then receive a metal deposited by physical vapor deposition performed at a high temperature and an additional heating step. The aperture of the resulting substrate is filled with metal and is substantially void-free and has a smooth surface morphology.
申请公布号 US2003228746(A1) 申请公布日期 2003.12.11
申请号 US20020170128 申请日期 2002.06.11
申请人 APPLIED MATERIALS, INC. 发明人 LEE WEI TI;GUO TED
分类号 H01L21/285;H01L21/768;(IPC1-7):H01L21/320;H01L21/476 主分类号 H01L21/285
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