摘要 |
A method for film deposition that includes, flowing a first reactive gas over a top surface of a wafer in a cold wall single wafer process chamber to form a first half-layer of the film on the wafer, stopping the flow of the first reactive gas, removing residual first reactive gas from the cold wall single wafer process chamber, flowing a second reactive gas over the first half-layer to form a second half-layer of the film where deposition of the second half-layer is non self-limiting, controlling a thickness of the second half-layer by regulating process parameters within the cold wall single wafer process chamber, stopping the flow of the second reactive gas; and removing residual second reactive gas from the cold wall single wafer process chamber. |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LUO, LEE;AHN, SANG HOON;CHEN, AIHUA;IYER, RAMASESHAN SURYANARAYANAN;WANG, SHULIN;THAKUR, RANDHIR, P., SINGH |