METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to be capable of easily forming the contact hole without using photolithographic processing. CONSTITUTION: A semiconductor substrate is prepared. Oxide patterns(50a) for a mold are formed on the semiconductor substrate for forming interconnections, wherein the oxide patterns(50a) have the first width(W11) and a contact hole forming region has the second width(W12). The second width(W12) is wider than the first width(W11). Damascene interconnections are then formed between the oxide patterns(50a). A contact hole is formed by selectively etching the remaining oxide patterns.