| 摘要 |
PURPOSE: A method is provided to form a cell pad of DRAM by using contact holes without adopting photolithography. CONSTITUTION: A parallel gate pattern(50) is formed on a semiconductor substrate(5) such that each gate pattern has a tap portion at a desired interval to define the first region in which the tap portion faces to each other and the second region without the tap portion. The second region which is wider than the first region is designated to form a cell pad. Next, a spacer(60a) is formed at the side wall of the gate pattern(50). In the first region, the spacer(60a) fills up the space between the taps. In the second region, a contact hole(68a,68b) is formed by the spacer. Finally, the cell pad is formed by filling up the contact hole with a conductive material.
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