| 摘要 |
PURPOSE: A gas heating apparatus for carrying out a CVD(Chemical Vapor Deposition) process and a method for manufacturing a semiconductor device using the same are provided to be capable of activating reaction gas and improving heat efficiency. CONSTITUTION: A gas heating apparatus for carrying out a CVD process is provided with a chamber(10), a heat insulator(20), a quartz tube(100) used as the path for reaction gas, a plurality of ceramic balls(40) installed in the quartz tube, and a heater(200). At this time, the quartz tube is formed into a zigzag type structure, wherein the quartz tube includes an inlet port(111), an outlet port(112), an expanded pipe part(113) having a larger inner diameter than those of the inlet and outlet port, and a shrunk pipe part(114). At the time, the ceramic ball is installed at the expanded pipe part of the quartz tube.
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