发明名称 |
Semiconductor device |
摘要 |
A first pattern forming a memory cell is provided on a memory cell region, and a second pattern consisting of a film containing nitrogen atoms is provided on the first pattern. A third pattern forming a gate electrode of a transistor so that the height between the main surface of a semiconductor substrate and the surface of the third pattern is lower than the first pattern is provided on a peripheral circuit region, and a fourth pattern consisting of a film containing nitrogen atoms having a larger thickness than the second pattern is provided on the third pattern in correspondence to the third pattern. The thickness of a portion of the interlayer dielectric film located between the second pattern and a second conductive layer is smaller than the thickness of a portion of the interlayer dielectric film located between the fourth pattern and the second conductive layer.
|
申请公布号 |
US2003227042(A1) |
申请公布日期 |
2003.12.11 |
申请号 |
US20020319533 |
申请日期 |
2002.12.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIBI YASUHIRO;SUGIHARA TSUYOSHI;SHIMIZU SATOSHI |
分类号 |
H01L21/8234;H01L21/8247;H01L27/088;H01L27/10;H01L27/105;H01L27/115;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|