| 摘要 |
<p>A method of forming a copper film on a substrate is described. The copper film is formed using a cyclical deposition technique by alternately adsorbing a copper-containing precursor and a reducing gas on a substrate. One or more of the time intervals for the copper-containing precursor, the time intervals for the reducing gas and the time intervals of non-pulsing may have different values for one or more deposition cycles of the cyclical deposition process. The copper film formation is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the copper film may be used as interconnect metallization.</p> |
