| 摘要 |
<p>A polishing fluid which comprises an oxidizing agent for metals, anticorrosive for metals, metal oxide-dissolving agent, and water, wherein the metal oxide-dissolving agent comprises at least one member selected among acids having a dissociation constant (pKa) for the first dissociable acidic group of 3.5 or larger, ammonium salts of the acids, and organic esters of the acids, the pH of the polishing fluid is 3 to 4, and the concentration of the oxidizing agent for metals is 0.01 to 3 wt.%. By using the polishing fluid, which has a low abrasive grain concentration and a low metal anticorrosive concentration, in a wiring step for semiconductor devices, the conductor constituting a barrier layer can be polished at a high rate.</p> |
