发明名称 METHOD FOR MANUFACTURING FERROELECTRIC CAPACITOR
摘要 PURPOSE: A method for manufacturing a ferroelectric capacitor is provided to be capable of improving the coating property of a ferroelectric film in MTP(Merged Top Electrode) structure formation. CONSTITUTION: A plurality of lower electrodes(21) are formed on a substrate(20). A capacitor insulating layer(22) is formed on the entire surface of the resultant structure. The capacitor insulating layer(22) is planarized by wet-etching to expose the surface of the lower electrodes(21). A ferroelectric film(23) and an upper electrode(24) are sequentially formed on the lower electrode and the capacitor insulating layer.
申请公布号 KR20030093783(A) 申请公布日期 2003.12.11
申请号 KR20020031629 申请日期 2002.06.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, JUN HUI;CHO, YUN SEOK
分类号 H01L27/105;(IPC1-7):H01L27/105 主分类号 H01L27/105
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