发明名称 |
METHOD FOR MANUFACTURING FERROELECTRIC CAPACITOR |
摘要 |
PURPOSE: A method for manufacturing a ferroelectric capacitor is provided to be capable of improving the coating property of a ferroelectric film in MTP(Merged Top Electrode) structure formation. CONSTITUTION: A plurality of lower electrodes(21) are formed on a substrate(20). A capacitor insulating layer(22) is formed on the entire surface of the resultant structure. The capacitor insulating layer(22) is planarized by wet-etching to expose the surface of the lower electrodes(21). A ferroelectric film(23) and an upper electrode(24) are sequentially formed on the lower electrode and the capacitor insulating layer.
|
申请公布号 |
KR20030093783(A) |
申请公布日期 |
2003.12.11 |
申请号 |
KR20020031629 |
申请日期 |
2002.06.05 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHO, JUN HUI;CHO, YUN SEOK |
分类号 |
H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|