发明名称 |
Improved contact and deep trench patterning |
摘要 |
A method for patterning semiconductor components includes the steps of providing a substrate layer, the substrate layer having a dielectric layer formed thereon and a mask layer formed on the dielectric layer, the mask layer being selectively etchable relative to the dielectric layer, patterning the mask layer to form a first group of substantially parallel lines in the mask layer and patterning the dielectric layer to form rectangular holes therein down to the substrate layer. A semiconductor device in accordance with the invention is also included. <IMAGE> |
申请公布号 |
EP1022771(A3) |
申请公布日期 |
2003.12.10 |
申请号 |
EP20000300027 |
申请日期 |
2000.01.05 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RUPP, THOMAS S.;ZACH, FRANZ;THOMAS, ALAN |
分类号 |
H01L21/302;G03F7/40;H01L21/027;H01L21/28;H01L21/3065;H01L21/311;H01L21/762;H01L21/768 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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