发明名称 |
Preparation of LCPMO thin films which have reversible resistance change properties |
摘要 |
A method of forming a perovskite thin film includes preparing a perovskite precursor solution; preparing a silicon substrate for deposition of a perovskite thin film, including forming a bottom electrode on the substrate; securing the substrate in a spin-coating apparatus and spinning the substrate at a predetermined spin rate; injecting a perovskite precursor solution into the spin-coating apparatus thereby coating the substrate with the perovskite precursor solution to form a coated substrate; baking the coated substrate at temperatures which increase incrementally from about 90 DEG C to 300 DEG C; and annealing the coated substrate at a temperature of between about 500 DEG C to 800 DEG C for between about five minutes to fifteen minutes. <IMAGE> |
申请公布号 |
EP1369501(A2) |
申请公布日期 |
2003.12.10 |
申请号 |
EP20030253093 |
申请日期 |
2003.05.16 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
ZHUANG, WEIWEI;HSU, SHENG TENG;PAN, WEI;TAJIRI, MASAYUKI |
分类号 |
H01L21/205;C23C18/12;G11C13/00;H01L27/10;H01L45/00;(IPC1-7):C23C18/12 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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