| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily make a film to be thick and to eliminate the need of a heat processing at a high temperature by reacting raw solution which executes water/heat synthesis in a specified temperature range, generating the fine particles of specified particle diameters in solution and water/heat-synthesizing them so as to form a ferroelectric thin film where surface roughness is specified on the film. SOLUTION: The thin film whose surface roughness Rmax is not more than 2μdeg.C is obtained by reacting raw solution executing water/heat synthesis at 0-100 deg.C, generating the fine particles whose average diameters are 20-1000 nm in solution, immersing the ferroelectric film and forming the film on the said film by water/heat synthesis. To put it more minutely, compound containing Pb is 50-500 mmol/l, compound containing Zr is 0-500 mmol/l, compound containing Ti is 0.002-500 mmol/l, and compound containing La is 0-50 mmol/l are reacted in alkali solution at 0-100 deg.C as conditions, the fine particles whose average particle diameters are 20-1000 nm are generated and the substrate where the ferroelectric layer whose surface roughness is large is formed is immersed in solution and it is water/heat-synthesized.</p> |
