| 摘要 |
<p>PROBLEM TO BE SOLVED: To make the degree of crystallization of a semiconductor film higher by performing laser annealing changing the energy density of a laser beam into a low state, a high state, and a low state. SOLUTION: As a laser beam LA for laser annealing, a laser beam having a narrow peak region in its strength profile and gently-sloping base parts at its both ends is used. The energy density of the laser beam LA to be emitted to a semiconductor film is changed into a low state, a high state, and a low state by moving irradiated region LO by the laser beam LA and a substrate relatively, emitting the laser beam. That is, the energy density of the laser beam emitted increases gradually at every pulse of laser oscillation at any point in a surface. Besides, it becomes possible to change the number of times of laser beam emission on one spot freely by changing the relative feed rate of the substrate.</p> |
