| 摘要 |
A wiring or electrode structure is configured to reduce the wiring inductance of the power conductors in a semiconductor power module and prevent as much as possible the emission of interference electromagnetic waves. The wiring or electrode structure has an insulation layer (5) that faces a main surface of a conductive base layer (4), a first electrical conductor (11, 211, 311, 411, 511, 611, 711, 811) that faces the surface of the insulation layer (5), and a second electrical conductor (12, 212, 312, 412, 512, 612, 712, 812) through which current flows in the opposite direction as the current that flows in the first conductor. The second electrical conductor (12, 212, 312, 412, 512, 612, 712, 812) overlying the first electrical conductor (11, 211, 311, 411, 511, 611, 711, 811) such opposite longitudinal edges of the second electrical conductor (12, 212, 312, 412, 512, 612, 712, 812) extend beyond corresponding longitudinal edges of the first electrical conductor (11, 211, 311, 411, 511, 611, 711, 811) at all locations by predetermined distances. <IMAGE> |
