发明名称 Plasma-resistant, welded aluminum structures for use in semiconductor apparatus
摘要 We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
申请公布号 US6659331(B2) 申请公布日期 2003.12.09
申请号 US20020086003 申请日期 2002.02.26
申请人 APPLIED MATERIALS, INC 发明人 THACH SENH;SUN JENNIFER Y.;WU SHUN JACKSON;LIN YIXING;STOW CLIFFORD C.
分类号 B23K20/12;B23K20/233;B23K20/24;B23K101/40;C22C21/06;H01L21/02;H01L21/3065;(IPC1-7):B23K31/02;C22C21/00 主分类号 B23K20/12
代理机构 代理人
主权项
地址