发明名称 |
Method and device for forming an STI type isolation in a semiconductor device |
摘要 |
A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.
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申请公布号 |
US6660613(B2) |
申请公布日期 |
2003.12.09 |
申请号 |
US20020102997 |
申请日期 |
2002.03.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHUL-SUNG;CHOI SI-YOUNG;PARK JUNG-WOO;RYU JONG-RYOL;LEE BYEONG-CHAN |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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