发明名称 Method for fabricating oxide layers with different thicknesses
摘要 A method for fabricating oxide layers with different thicknesses on a substrate is described. A field oxide layer is formed on the substrate to define a first active region and a second active region therebetween. A first oxide layer is formed over the first active region. A thin oxynitride layer is formed on the first oxide layer. The substrate is oxidized to form a second oxide layer over the second active region, wherein the second oxide layer has a thickness different from the thickness of the first oxide layer,
申请公布号 US6660593(B2) 申请公布日期 2003.12.09
申请号 US20000747374 申请日期 2000.12.21
申请人 WINBOND ELECTRONICS CORP. 发明人 CHIANG SHING-SING;TENG KUO-SHI;YUNG HAO-CHIEH;CHEN YI-SHI
分类号 H01L21/32;H01L21/8234;(IPC1-7):H01L21/00 主分类号 H01L21/32
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