发明名称 |
Semiconductor device and a manufacturing method thereof |
摘要 |
A method of manufacturing a semiconductor device includes forming process of forming a semiconductor element on a semiconductor wafer and testing process of testing electrical performance of the formed semiconductor element. The testing process includes process of electrically connecting a testing apparatus to an electrode pad formed on the semiconductor element to be tested. The testing apparatus has a probe-formed substrate including a plurality of beams having probes to be electrically connected to the electrode pads. The probe-formed substrate has a first beam having at least one probe for electrically connection with the electrode pad and a second beam having a number of probes for electrical connection with the electrode pads of which number is more than the number of the electrode pads electrically connected by said first beam.
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申请公布号 |
US6660541(B2) |
申请公布日期 |
2003.12.09 |
申请号 |
US20020280117 |
申请日期 |
2002.10.23 |
申请人 |
HITACHI, LTD. |
发明人 |
KANAMARU MASATOSHI;ENDO YOSHISHIGE;AONO TAKANORI;KOHNO RYUJI;AOKI HIDEYUKI |
分类号 |
G01R31/26;G01R1/06;H01L21/66;H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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