发明名称 Semiconductor device and a manufacturing method thereof
摘要 A method of manufacturing a semiconductor device includes forming process of forming a semiconductor element on a semiconductor wafer and testing process of testing electrical performance of the formed semiconductor element. The testing process includes process of electrically connecting a testing apparatus to an electrode pad formed on the semiconductor element to be tested. The testing apparatus has a probe-formed substrate including a plurality of beams having probes to be electrically connected to the electrode pads. The probe-formed substrate has a first beam having at least one probe for electrically connection with the electrode pad and a second beam having a number of probes for electrical connection with the electrode pads of which number is more than the number of the electrode pads electrically connected by said first beam.
申请公布号 US6660541(B2) 申请公布日期 2003.12.09
申请号 US20020280117 申请日期 2002.10.23
申请人 HITACHI, LTD. 发明人 KANAMARU MASATOSHI;ENDO YOSHISHIGE;AONO TAKANORI;KOHNO RYUJI;AOKI HIDEYUKI
分类号 G01R31/26;G01R1/06;H01L21/66;H01L23/544;(IPC1-7):H01L21/66 主分类号 G01R31/26
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