发明名称 Methods and apparatus for oxygen implantation
摘要 An oxygen ion containing plasma is generated using a hot filament ion source. The oxygen ions in the plasma come from an oxide source (e.g., a metal oxide) which has a lower free energy of formation than that of the filament metal oxide (e.g., WO3) at the operating temperatures of the ion source. Consequently, oxidation of the filament and other metal components of the arc chamber is limited, or even prevented. Thus, the invention can advantageously lead to longer filament lives as compared to certain conventional processes that generate oxygen plasmas using hot filament sources.
申请公布号 US6661014(B2) 申请公布日期 2003.12.09
申请号 US20020095678 申请日期 2002.03.12
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 REYES JAIME M.
分类号 H01J37/08;H01J37/317;(IPC1-7):H01J27/00 主分类号 H01J37/08
代理机构 代理人
主权项
地址