发明名称 |
Lateral insulated gate bipolar PMOS device |
摘要 |
A lateral insulated gate bipolar PMOS device includes a semiconductor substrate, a buried insulating layer and a lateral PMOS transistor device in an SOI layer on the buried insulating layer having a source region of p-type conductivity. A lateral drift region of n-type conductivity is provided adjacent the body region, and a drain region of the p-type conductivity is provided laterally spaced from the body region by the drift region. An n-type conductivity drain region is formed of a shallow n-type contact surface region inserted into a p-inversion buffer. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region.
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申请公布号 |
US6661059(B1) |
申请公布日期 |
2003.12.09 |
申请号 |
US20020261254 |
申请日期 |
2002.09.30 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
LETAVIC THEODORE;PETRUZZELLO JOHN;DUFORT BENOIT |
分类号 |
H01L29/739;(IPC1-7):H01L29/76;H01L29/94;H01L27/01;H01L27/12;H01L21/00;H01L21/84;H01L21/20;H01L21/36;H01L21/425;H01L31/062;H01L31/113;H01L31/119;H01L31/039 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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